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BUV28
SILICON NPN SWITCHING TRANSISTOR
s s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON
APPLICATIONS: SWITCHING REGULATORS s SOLENOID / RELAY DRIVERS
s
DESCRIPTION High speed transistor suited for low voltage applications. High frequency and efficiency converters switching regulators motor control.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc < 25 o C Total Dissipation at T c < 60 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 7 10 15 2 4 85 65 -65 to +175 175 Unit V V V A A A A W W
o o
C C
June 1997
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BUV28
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 50) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 400V T c = 125 C V CE = 400V VBE = -1.5V T c = 125 C V EB = 5 V I C = 0.2 A I E = 50mA I C = 3A I C = 6A I C = 6A I B = 0.3A I B = 0.6A I B = 0.6A L = 25mH 200 7 30 0.7 1.5 2
o o
Min.
Typ.
Max. 3 1 1
Unit mA mA mA V V V V V
V CEO(sus) Collector-Emitter Sustaining Voltage V EBO V CE(sat) V BE(sat) Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage RESISTIVE LOAD Storage Time Fall Time Turn-on Time INDUCTIVE LOAD Storage time Fall Time Storage Time Fall Time
t on ts tf ts tf ts tf
V CC = 150V V BE = - 6V R BB = 5 V CC I B1 LB V CC I B1 LB = 150V = 0.6A =1H = 150V = 0.6A = 1H
I C = 6A I B1 = 0.6A
0.3 0.5 0.1 1 0.04
1 1.5 0.25
s s s s s
I C = 6A V BE = - 5V I C = 6A V BE = - 5V T j = 125 o C
3 0.2
s s
Pulsed: Pulse duration = 300s, duty cycle = 2 %
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BUV28
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BUV28
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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